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| FDG6335N October 2001 FDG6335N 20V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features * 0.7 A, 20 V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Low gate charge (1.1 nC typical) * High performance trench technology for extremely low RDS(ON) * Compact industry standard SC70-6 surface mount package Applications * DC/DC converter * Power management * Loadswitch S G D D G Pin 1 S 1 or 4 G 2 or 5 6 or 3 D 5 or 2 G 4 or 1 S Dual N-Channel S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 12 (Note 1) Units V V A W C 0.7 2.1 0.3 -55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W Package Marking and Ordering Information Device Marking .35 Device FDG6335N Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2001 Fairchild Semiconductor Corporation FDG6335N Rev C (W) FDG6335N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V 14 1 100 -100 mV/C A nA nA VGS = -12 V, VDS = 0 V ID = 250 A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 0.6 1.1 -2.8 180 293 247 1.5 V mV/C ID = -250 A, Referenced to 25C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 0.7 A ID = 0.6 A ID = 0.7 A, TJ=125C VDS = 5 V ID = 0.7 A 300 400 442 m ID(on) gFS 1 2.8 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 113 34 16 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 5 7 9 1.5 10 15 18 3 1.4 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 0.7 A, 1.1 0.24 0.3 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.25 A (Note 2) 0.25 0.74 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG6335N Rev C (W) FDG6335N Typical Characteristics 4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V ID, DRAIN CURRENT (A) 3.5V 3 2.5V 3.0V 1.8 1.6 VGS = 2.5V 1.4 3.0V 3.5V 4.0V 1 4.5V 2 1.2 2.0V 1 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 I D, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4 ID =0.4A 0.6 1.2 TA = 125oC 0.4 1 TA = 25oC 0.2 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 2.5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V I D, DRAIN CURRENT (A) 2 TA = -55 oC 25oC 125oC 1 TA = 125o C 25 oC -55oC 1.5 0.1 1 0.01 0.5 0.001 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6335N Rev C (W) FDG6335N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.7A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V 200 f = 1MHz VGS = 0 V 150 CISS 100 2 COSS 50 1 CRSS 0 0 0.4 0.8 Qg , GATE CHARGE (nC) 1.2 1.6 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 8 SINGLE PULSE RJA = 415C/W TA = 25C 1 6 0.1 VGS = 4.5V SINGLE PULSE RJA = 415oC/W TA = 25oC DC 4 2 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 415 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6335N Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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